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| 型號： | 934056396127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220F, FULLPACK-3 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 293K |
| 代理商： | 934056396127 |
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specication
Rev. 01 — 28 August 2000
3 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
VGS ≥ 4.5 V
Fig 1.
Normalized total power dissipation as a
function of ambient temperature.
Fig 2.
Normalized continuous drain current as a
function of ambient temperature.
Tamb =25 °C; IDM is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa11
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
der
T
mb
(
o
C)
(%)
03aa19
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
I
der
T
amb
(
o
C)
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ac74
10-1
1
10
102
110
102
103
VDS (V)
ID
(A)
RDSon = VDS / ID
D.C.
tp = 10s
100
s
1 ms
10 ms
100 ms
tp
T
P
t
T
δ =
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