參數(shù)資料
型號: 934056396127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, TO-220F, FULLPACK-3
文件頁數(shù): 8/14頁
文件大小: 293K
代理商: 934056396127
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specication
Rev. 01 — 28 August 2000
2 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
200
V
ID
drain current (DC)
Ths =25 °C; VGS =10V
8.2
A
Ptot
total power dissipation
Ths =25 °C
30
W
Tj
junction temperature
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 8 A; Tj =25 oC
130
180
m
VGS = 10 V; ID = 8 A; Tj = 150 °C
450
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
200
V
VDGR
drain-gate voltage (DC)
Tj =25to150 °C; RGS =20k
200
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
Ths =25 °C; VGS =10V;
8.2
A
Ths = 100 °C; VGS =10V; Figure 2
5.2
A
IDM
peak drain current
Ths =25 °C; pulsed; tp ≤ 10 s;
33
A
Ptot
total power dissipation
Ths =25 °C; Figure 1
30
W
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tamb =25 °C
8.2
A
ISM
peak source (diode forward) current
Tamb =25 °C; pulsed; tp ≤ 10 s
33
A
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