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參數(shù)資料
| 型號： | 934056468112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 73K |
| 代理商： | 934056468112 |
2002 Mar 18
2
Philips Semiconductors
Product specication
Avionics LDMOS transistor
BLA1011-200
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators,
reducing common mode inductance.
APPLICATIONS
Avionics transmitter applications in the
1030 to 1090 MHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead SOT502A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
PINNING - SOT502A
PIN
DESCRIPTION
1
drain
2
gate
3
source, connected to ange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
RF performance at Th =25 °C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
η
D
(%)
tr
(ns)
tf
(ns)
Pulsed class-AB;
tp =50 s; δ =2%
1030 to 1090
36
200
>13;
typ. 15
>45;
typ. 50
<50;
typ. 35
<50;
typ. 6
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
75
V
VGS
gate-source voltage
±22
V
Ptot
total power dissipation
Th ≤ 25 °C; tp =50 s; δ =2%
700
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
200
°C
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