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參數(shù)資料
| 型號： | 934056468112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 73K |
| 代理商： | 934056468112 |
2002 Mar 18
4
Philips Semiconductors
Product specication
Avionics LDMOS transistor
BLA1011-200
handbook, halfpage
0
20
Gp
(dB)
Gp
η
D
(%)
η
D
10
15
5
0
80
40
60
20
0
50
250
PL (W)
MGW033
100
150
200
Fig.2
Power gain and efficiency as functions of
load power; typical values.
VDS = 36 V; IDQ = 150 mA; f = 1060 MHz;
tp =50 s; δ =2%.
handbook, halfpage
0
250
PL
(W)
150
200
50
100
0
PD (W)
MGW034
2468
Fig.3
Load power as a function of drive power;
typical values.
VDS = 36 V; IDQ = 150 mA; f = 1060 MHz;
tp =50 s; δ =2%.
handbook, halfpage
0
20
Gp
(dB)
12
16
4
8
0
50
PL (W)
MGW035
100
150
200
250
IDQ = 1.5 A
150 mA
Fig.4
Power gain as a function of load power;
typical values.
VDS = 36 V; f = 1060 MHz; tp =50 s; δ =2%.
handbook, halfpage
0
250
PL
(W)
PL
150
200
50
100
0
20
12
16
4
8
0
Gp
(dB)
Gp
1
VGS (V)
MGW036
23
4
5
VDS = 36 V; IDQ = 150 mA; PD = 5.5 W;
f = 1060 MHz; tp =50 s; δ =2%.
Fig.5
Load power and power gain as functions of
gate-source voltage; typical values.
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