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參數(shù)資料
| 型號： | 934056468112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 73K |
| 代理商： | 934056468112 |
2002 Mar 18
3
Philips Semiconductors
Product specication
Avionics LDMOS transistor
BLA1011-200
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under RF operating conditions; tp =50 s, δ =10%.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C; Zth mb-h = 0.15 K/W; unless otherwise specied.
Ruggedness in class-AB operation
The BLA1011-200 is capable of withstanding a load mismatch corresponding to VSWR=5:1 through all phases under
the following conditions: VDS = 36 V; f = 1030 to 1090 MHz at rated load power.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Zth j-h
thermal impedance from junction
to heatsink
Th =25 °C; note 1
0.15
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 3 mA
75
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID = 300 mA
4
5V
IDSS
drain-source leakage current
VGS = 0; VDS =36V
1
A
IDSX
on-state drain current
VGS =VGSth +9V; VDS =10V
45
A
IGSS
gate leakage current
VGS = ±20 V; VDS =0
1
A
gfs
forward transconductance
VDS = 10 V; ID =10A
9
S
RDSon
drain-source on-state resistance
VGS =9V; ID =10A
60
m
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
tr
(ns)
tf
(ns)
Pulsed class-AB;
tp =50 s; δ =2%
1030 to 1090
36
200
>13;
typ. 15
>45;
typ. 50
<50;
typ. 35
<50;
typ. 6
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