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參數(shù)資料
| 型號(hào)： | 934056482118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 100 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 11/15頁(yè) |
| 文件大?。?/td> | 314K |
| 代理商： | 934056482118 |
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Philips Semiconductors
BUK7575-100A; BUK7675-100A
TrenchMOS standard level FET
Product specication
Rev. 01 — 24 October 2000
5 of 15
9397 750 07623
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
100
V
Tj = 55 °C89
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C2
3
4
V
Tj = 175 °C1
V
Tj = 55 °C
4.4
V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =13A;
Tj =25 °C
64
75
m
Tj = 175 °C
187
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
907
1210
pF
Coss
output capacitance
127
150
pF
Crss
reverse transfer capacitance
78
110
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 2.2 ;
VGS =10V; RG = 5.6 ;
8
ns
tr
rise time
39
ns
td(off)
turn-off delay time
26
ns
tf
fall time
24
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
4.5
nH
from contact screw on
mounting base to centre of
die SOT78
3.5
nH
from upper edge of drain
mounting base to centre of
die SOT404
2.5
nH
Ls
internal source inductance
from source lead to source
bond pad
7.5
nH
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