參數(shù)資料
型號: 934056482118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 23 A, 100 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SMD, D2PAK-3
文件頁數(shù): 14/15頁
文件大小: 314K
代理商: 934056482118
Philips Semiconductors
BUK7575-100A; BUK7675-100A
TrenchMOS standard level FET
Product specication
Rev. 01 — 24 October 2000
8 of 15
9397 750 07623
Philips Electronics N.V. 2000. All rights reserved.
VDS =25V
Tj =25 °C; ID =25A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
VGS =0V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
03nb29
0
5
10
15
20
25
30
35
02
46
8
VGS (V)
ID
(A)
Tj = 175
O C
Tj = 25
O C
03nb27
0
1
2
3
4
5
6
7
8
9
10
010
20
30
QG (nC)
VGS
(V)
VDS= 80 V
VDS= 14 V
03nb26
0
5
10
15
20
25
30
35
40
45
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (V)
IS
(A)
Tj = 175
O C
Tj = 25
O
C
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