參數(shù)資料
型號(hào)： 934056498112
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 4 PIN
文件頁(yè)數(shù)： 10/16頁(yè)
文件大小： 120K
代理商： 934056498112
2001 Nov 27
3
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF647
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tj =25 °C per section unless otherwise specied.
Note
1. Capacitance values of the die only.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
Tmb =25 °C; Ptot = 290 W
0.6
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
0.2
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 1.4 mA
65
V
VGSth
gate-source threshold voltage
VDS = 20 V; ID = 140 mA
4
5.5
V
IDSS
drain-source leakage current
VGS = 0; VDS =28V
1.2
A
IDSX
drain cut-off current
VGS =VGSth +9V; VDS =10V
18
A
IGSS
gate leakage current
VGS = ±15 V; VDS =0
25
nA
gfs
forward transconductance
VDS = 20 V; ID =4A
4
S
RDSon
drain-source on-state resistance
VGS =VGSth +9V; ID =4A
160
m
Ciss
input capacitance
VGS =0; VDS = 28 V; f = 1 MHz;
note 1
80
pF
Coss
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
43
pF
Crss
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
6
pF
handbook, halfpage
Coss
(pF)
030
10
40
50
VDS (V)
20
100
60
80
20
0
40
MGW546
Fig.2
Output capacitance as a function of
drain-source voltage; typical values per
section.
VGS = 0; f = 1 MHz; Tj =25 °C.
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