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參數(shù)資料
| 型號： | 934056498112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 4 PIN |
| 文件頁數(shù)： | 11/16頁 |
| 文件大小： | 120K |
| 代理商： | 934056498112 |
2001 Nov 27
4
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF647
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C; Rth mb-h = 0.2 K/W, unless otherwise specied.
Ruggedness in class-AB operation
The BLF647 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 28 V; f = 100 MHz at rated load power.
The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions.
Impedances (per section)
At f = 600 MHz, PL = 120 W, VDS = 28 V and IDQ = 1 A: Zin = 1.0 + j2.0 and ZL = 2.7 + j0.7 .
At f = 800 MHz, PL = 150 W, VDS = 32 V and IDQ = 1 A: Zin = 1.0 + j3.8 and ZL = 1.8 + j0.7 .
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
η
D
(%)
dim
(dBc)
CW, class-AB
600
28
120
>14.5
>55
2-tone, class-AB
f1 = 600; f2 = 600.1
28
120 (PEP)
>14.5
>40
≤26
CW, class-AB
800
32
150
typ. 12.5
typ. 60
2-tone, class-AB
f1 = 800; f2 = 800.1
32
150 (PEP)
typ. 13
typ. 45
typ.
30
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