參數(shù)資料
型號(hào)： 934056522112
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 2 PIN
文件頁(yè)數(shù)： 10/15頁(yè)
文件大小： 169K
代理商： 934056522112
2003 Feb 24
4
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF2022-90
handbook, halfpage
15
0
40
120
10
11
12
13
14
80
PL (PEP) (W)
Gp
(dB)
Gp
ηD
(%)
50
0
10
20
30
40
MLD837
ηD
Fig.2
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
VDS = 28 V; IDQ = 750 mA; Th =25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
handbook, halfpage
040
d3
d5
d7
PL (PEP) (W)
dim
(dBc)
80
120
0
20
60
80
40
MLD838
VDS = 28 V; IDQ = 750 mA; Th =25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
Fig.3
Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
15
0
40
120
10
11
12
13
14
80
PL (PEP) (W)
Gp
(dB)
Gp
ηD
(%)
50
0
10
20
30
40
MLD839
ηD
(2)
(3)
(1)
(4)
(5)
(6)
Fig.4
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
VDS = 28 V; Th =25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
(1) IDQ = 900 mA.
(2) IDQ = 750 mA.
(3) IDQ = 600 mA.
(4) IDQ = 600 mA.
(5) IDQ = 750 mA.
(6) IDQ = 900 mA.
handbook, halfpage
040
(2)
(3)
PL (PEP) (W)
dim
(dBc)
80
120
0
20
60
80
40
MLD840
(1)
VDS = 28 V; Th =25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
Fig.5
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
(1) IDQ = 600 mA.
(2) IDQ = 900 mA.
(3) IDQ = 750 mA.
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