參數(shù)資料
型號(hào): 934056522112
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, LDMOST, 2 PIN
文件頁(yè)數(shù): 11/15頁(yè)
文件大?。?/td> 169K
代理商: 934056522112
2003 Feb 24
5
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF2022-90
handbook, halfpage
25
PL(AV) (dBm)
15
10
5
0
30
35
45
40
MLD833
Gp
(dB)
ηD
(%)
Gp
ηD
30
10
20
0
Fig.6
Power gain and drain efficiency as functions
of average load power; typical values.
Single carrier W-CDMA performance.
VDS =28V;IDQ = 750 mA; Th =25 °C; f = 2140 MHz.
Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on
CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
handbook, halfpage
25
30
PL(AV) (dBm)
ACLR
(dBc)
35
45
0
20
60
80
40
MLD834
ACLR5
ACLR10
Fig.7
Adjacent channel leakage ratio (ACLR5 and
ACLR10) as function of average load power;
typical values.
Single carrier W-CDMA performance.
VDS =28V;IDQ = 750 mA; Th =25 °C; f = 2140 MHz.
Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on
CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
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934056523115 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
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