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參數(shù)資料
| 型號： | 934056522112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 9/15頁 |
| 文件大?。?/td> | 169K |
| 代理商： | 934056522112 |
2003 Feb 24
3
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF2022-90
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Notes
1. Thermal resistance is determined under specified RF operating conditions.
2. Depending on mounting conditions.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C; Rth j-c = 0.65 K/W; unless otherwise specied.
Ruggedness in class-AB operation
The BLF2022-90 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 28 V; IDQ = 750 mA; PL = 90 W (CW); f = 2170 MHz.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDS
drain-source voltage
65
V
VGS
gate-source voltage
±15
V
ID
DC drain current
12
A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-c
thermal resistance from junction to case
Th =25 °C; note 1
0.65
K/W
Rth c-h
thermal resistance from case to heatsink
Th =25 °C; note 2
0.2
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 2.1 mA
65
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID = 210 mA
4.4
5.5
V
IDSS
drain-source leakage current
VGS = 0; VDS =26V
15
A
IDSX
on-state drain current
VGS =VGSth +9V; VDS =10V
27
A
IGSS
gate leakage current
VGS = ±15 V; VDS =0
38
nA
gfs
forward transconductance
VDS = 10 V; ID = 7.5 A
6.2
S
RDSon
drain-source on-state resistance
VGS =VGSth +9V; ID = 7.5 A
0.1
Crs
feedback capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
5.1
pF
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
2-tone, class-AB
f1 = 2170; f2 = 2170.1
28
750
90 (PEP)
>11
>30
≤25
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