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參數(shù)資料
| 型號： | 934056527135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 76K |
| 代理商： | 934056527135 |
2003 May 13
2
Philips Semiconductors
Product specication
50 V low VCEsat PNP transistor
PBSS5350Z
FEATURES
Low collector-emitter saturation voltage
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
Higher efficiency leading to less heat generation
Reduced PCB area requirements compared to DPAK.
APPLICATIONS
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– Linear voltage regulation (LDO).
Peripheral drivers
– Driver in low supply voltage applications, e.g. lamps,
LEDs
– Inductive load driver, e.g. relays, buzzers, motors.
DESCRIPTION
PNP low VCEsat transistor in a SOT223 plastic package.
NPN complement: PBSS4350Z.
MARKING
TYPE NUMBER
MARKING CODE
PBSS5350Z
PB5350
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
4
collector
handbook, halfpage
4
12
3
MAM288
Top view
3
2, 4
1
Fig.1
Simplified outline (SOT223) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
50
V
IC
collector current (DC)
3A
ICM
peak collector current
5A
RCEsat
equivalent on-resistance
<150
m
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