參數(shù)資料
型號: 934056527135
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 3 A, 50 V, PNP, Si, POWER TRANSISTOR
封裝: PLASTIC, SC-73, 4 PIN
文件頁數(shù): 9/12頁
文件大?。?/td> 76K
代理商: 934056527135
2003 May 13
6
Philips Semiconductors
Product specication
50 V low VCEsat PNP transistor
PBSS5350Z
handbook, halfpage
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
2
1000
0
200
400
600
800
0.4
0.8
1.2
1.6
MGW171
VCE (V)
IC
(mA)
Fig.6
Collector current as a function of
collector-emitter voltage; typical values.
(1) IB = 3.96 mA.
(2) IB = 3.63 mA.
(3) IB = 3.30 mA.
(4) IB = 2.97 mA.
(5) IB = 2.64 mA.
(6) IB = 2.31 mA.
(7) IB = 1.98 mA.
(8) IB = 1.65 mA.
(9) IB = 1.32 mA.
(10) IB = 0.99 mA.
(11) IB = 0.66 mA.
(12) IB = 0.33 mA.
Tamb =25 °C.
handbook, halfpage
0
(4)
(5)
(6)
(7)
(8)
(9)
(10)
2
5
0
1
2
3
4
0.4
0.8
1.2
1.6
MGW172
VCE (V)
IC
(A)
(1) (2) (3)
Fig.7
Collector current as a function of
collector-emitter voltage; typical values.
(1) IB = 250 mA.
(2) IB = 225 mA.
(3) IB = 200 mA.
(4) IB = 175 mA.
(5) IB = 150 mA.
(6) IB = 125 mA.
(7) IB = 100 mA.
(8) IB = 75 mA.
(9) IB = 50 mA.
(10) IB = 25 mA.
Tamb =25 °C.
handbook, halfpage
103
102
10
1
101
MGU390
1
10
IC (mA)
RCEsat
(
)
102
103
104
(1)
(3)
(2)
Fig.8
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
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