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參數(shù)資料
| 型號(hào)： | 934056527135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | 934056527135 |
2003 May 13
5
Philips Semiconductors
Product specication
50 V low VCEsat PNP transistor
PBSS5350Z
handbook, halfpage
0
hFE
IC (mA)
1000
200
400
600
800
MGW167
101
1
10
102
103
104
(1)
(2)
(3)
Fig.2
DC current gain as a function of collector
current; typical values.
VCE = 2V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
IC (mA)
VBE
(V)
1.2
0.4
0.8
MGW168
101
1
10
102
103
104
(1)
(2)
(3)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
VCE = 2V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
IC (mA)
103
102
10
1
MGW169
101
1
10
102
103
104
VCEsat
(mV)
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
IC (mA)
1.4
0.8
0.6
0.4
0.2
1.0
1.2
MGW170
101
1
10
102
103
104
VBEsat
(V)
(1)
(2)
(3)
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
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