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參數(shù)資料
| 型號： | 934056576115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 4.6 A, 100 V, 0.201 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 3 PIN |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 285K |
| 代理商： | 934056576115 |
Philips Semiconductors
BUK98180-100A
TrenchMOS logic level FET
Product data
Rev. 02 — 18 May 2001
6 of 13
9397 750 08277
Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 5 A; VGS =0V;
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
49
ns
Qr
recovered charge
130
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °CTj =25 °C; ID =5A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nc31
0
5
10
15
20
25
02
46
8
10
VDS (V)
ID
(A)
2.2
3
10
5
4
VGS (V) =
03nc30
145
150
155
160
165
170
175
180
46
8
10
VGS (V)
RDSon
(m
)
03nc32
100
150
200
250
02468
10
12
ID (A)
RDSon
3.2
3.4
3.6
3.8
4
5
VGS (V) =
(m
)
3
03ne90
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-60
-20
20
60
100
140
180
Tj (
oC)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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