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參數(shù)資料
| 型號： | 934056576115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 4.6 A, 100 V, 0.201 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 3 PIN |
| 文件頁數(shù)： | 12/13頁 |
| 文件大小： | 285K |
| 代理商： | 934056576115 |
Philips Semiconductors
BUK98180-100A
TrenchMOS logic level FET
Product data
Rev. 02 — 18 May 2001
8 of 13
9397 750 08277
Philips Electronics N.V. 2001. All rights reserved.
VDS =25V
Tj =25 °C; ID =5A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
VGS =0V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
03nc29
0
2
4
6
8
10
12
14
16
18
01
234
VGS (V)
ID
(A)
Tj = 150
oC
Tj = 25
oC
03nc27
0
1
2
3
4
5
024
68
10
QG (nC)
VGS
(V)
VDD = 14 V
VDD = 80 V
03nc26
0
5
10
15
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (V)
IS
(A)
Tj = 150
oC
Tj = 25
oC
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