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參數(shù)資料
| 型號： | 934056576115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 4.6 A, 100 V, 0.201 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 3 PIN |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 285K |
| 代理商： | 934056576115 |
Philips Semiconductors
BUK98180-100A
TrenchMOS logic level FET
Product data
Rev. 02 — 18 May 2001
5 of 13
9397 750 08277
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
100
V
Tj = 55 °C89
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
1
1.5
2
V
Tj = 150 °C
0.6
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 150 °C
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =5A;
Tj =25 °C
153
180
m
Tj = 150 °C
389
m
VGS = 4.5 V; ID =5A;
201
m
VGS =10V; ID =5A;
147
173
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
464
619
pF
Coss
output capacitance
60
72
pF
Crss
reverse transfer capacitance
36
50
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =10
7
ns
tr
rise time
89
ns
td(off)
turn-off delay time
18
ns
tf
fall time
25
ns
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