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參數(shù)資料
| 型號： | 934056583112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 114K |
| 代理商： | 934056583112 |
2003 Mar 07
2
Philips Semiconductors
Preliminary specication
UHF push-pull power LDMOS transistor
BLF2022-120
FEATURES
Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 500 mA
– Output power = 20 W (AV)
– Gain = 12 dB
– Efficiency = 15%
– ACPR =
42 dBc at 3.84 MHz
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (2000 to 2200 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range
DESCRIPTION
120 W LDMOS push-pull power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
PINNING - SOT539A
PIN
DESCRIPTION
1
drain 1
2
drain 2
3
gate 1
4
gate 2
5
source, connected to ange
5
12
4
3
Top view
MBK880
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th =25 °C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
η
D
(%)
dim
(dBc)
2-tone, class-AB
f1 = 2170; f2 = 2170.1
28
500
120 (PEP)
>11
>30
≤25
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDS
drain-source voltage
65
V
VGS
gate-source voltage
±15
V
ID
drain current (DC)
18
A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
200
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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