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參數(shù)資料
| 型號(hào)： | 934056583112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大小： | 114K |
| 代理商： | 934056583112 |
2003 Mar 07
3
Philips Semiconductors
Preliminary specication
UHF push-pull power LDMOS transistor
BLF2022-120
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under nominal 2-tone RF operating conditions.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. Capacitance of die only.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C; Rth mb-h = 0.65 K/W, unless otherwise specied.
Ruggedness in class-AB operation
The BLF2022-120 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 28 V; f = 2170 MHz, PL = 120 W (CW).
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting-base
PL = 120 W; Tmb =50 °C; note 1
0.35
K/W
Rth mb-h
thermal resistance from mounting-base to heatsink
0.15
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per section
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 1.4 mA
65
V
VGSth
gate-source threshold voltage
VDS =10V; ID = 140 mA
4.4
5.5
V
IDSS
drain-source leakage current
VGS = 0; VDS =26V
10
A
IDSX
drain cut-off current
VGS =VGSth +9V; VDS =10V
18
A
IGSS
gate leakage current
VGS = ±15 V; VDS =0
25
nA
gfs
forward transconductance
VDS =10V; ID =5A
4.2
S
RDSon
drain-source on-state resistance
VGS =VGSth +9V; VDS =5V
0.15
Crss
feedback capacitance
VGS = 0; VDS = 26 V; f = 1 MHz;
note 1
3.4
pF
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
2-tone, class-AB
f1 = 2170; f2 = 2170.1
28
2 x 500
120 (PEP)
>11
>30
≤25
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