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參數(shù)資料
| 型號(hào)： | 934056583112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 6/11頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | 934056583112 |
2003 Mar 07
4
Philips Semiconductors
Preliminary specication
UHF push-pull power LDMOS transistor
BLF2022-120
handbook, halfpage
30
15
10
5
0
35
40
50
45
MDB155
60
40
20
0
Gp
(dB)
Gp
PL (AV)(W)
ηD
(%)
ηD
Fig.2
Power gain and drain efficiency as functions
of average load power, typical values.
VDS = 2 V; IDQ = 2 x 500 mA; Th ≤ 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
handbook, halfpage
20
30
50
16
12
4
0
8
40
MDB156
0
20
60
40
80
Gp
(dB)
Gp
ACPR
ACPR10
PL (AV)(W)
ACPR
(dBc)
Fig.3
Power gain and adjacent channel power
ratio as functions of load power; typical
values.
VDS = 2 V; IDQ = 2 x 500 mA; Th ≤ 25 °C;
f1 = 2140 MHz; f2 = 2140.1 MHz.
Input signal: 3GPP W-CDMA 15DPCH;
Peak to average ratio: 10.27 dB (0.0001%).
handbook, halfpage
30
35
40
50
0
20
60
80
40
45
MDB157
dim
(dBc)
PL (AV)(W)
d3
d5
d7
Fig.4
Intermodulation distortion as a function of
average load power; typical values.
VDS = 2 V; IDQ = 2 x 500 mA; Th ≤ 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
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