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參數(shù)資料
| 型號(hào)： | 934056597118 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 2900 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁(yè)數(shù)： | 11/13頁(yè) |
| 文件大?。?/td> | 262K |
| 代理商： | 934056597118 |
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Philips Semiconductors
PSMN165-200K
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 16 January 2001
7 of 13
9397 750 07896
Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C and 150 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa32
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60
-20
20
60
100
140
180
V
GS(th)
T
j
(
o
C)
(V)
max.
typ.
min
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
01
23
45
max
typ
min
V
GS
(V)
ID
(A)
03ae10
0
5
10
15
20
25
30
0
5
10
15
20
ID (A)
gfs
(S)
Tj = 25 C
150 C
VDS > ID X RDSon
03ae12
10
102
103
104
10-1
1
10
102
VDS (V)
Ciss,
Coss,
Crss
(pF)
Ciss
Coss
Crss
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