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參數(shù)資料
| 型號： | 934056597118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2900 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大小： | 262K |
| 代理商： | 934056597118 |
Philips Semiconductors
PSMN165-200K
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 16 January 2001
2 of 13
9397 750 07896
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
200
V
ID
drain current (DC)
Tsp =80 °C
2.9
A
Ptot
total power dissipation
Tsp =80 °C
3.5
W
Tj
junction temperature
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 2.5 A; Tj =25 °C
130
165
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
200
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
2.9
A
IDM
peak drain current
Tsp =25 °C; pulsed; tp ≤ 10 s
20
A
Ptot
total power dissipation
3.5
W
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tsp =80 °C
3.1
A
ISM
peak source (diode forward) current Tsp =25 °C; pulsed; tp ≤ 10 s
20
A
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