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參數(shù)資料
| 型號： | 934056597118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2900 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 262K |
| 代理商： | 934056597118 |
Philips Semiconductors
PSMN165-200K
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 16 January 2001
5 of 13
9397 750 07896
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 A; VGS =0V; Tj =25 °C
200
240
V
VGS(th)
gate-source threshold voltage
Tj =25 °C2
4
V
Tj = 150 °C
1.2
V
Tj = 55 °C
6V
IDSS
drain-source leakage current
VDS = 160 V; VGS =0V; Tj =25 °C
1
A
VDS = 200 V; VGS =0V; Tj = 150 °C
0.5
mA
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
130
165
m
Tj = 150 °C
325
413
m
Dynamic characteristics
gfs
forward transconductance
10
S
Qg(tot)
total gate charge
40
nC
Qgs
gate-source charge
4.5
nC
Qgd
gate-drain (Miller) charge
12
16.5
nC
Ciss
input capacitance
1330
pF
Coss
output capacitance
140
pF
Crss
reverse transfer capacitance
70
pF
td(on)
turn-on delay time
VDD = 100 V; RD = 100 ;
VGS =10V;RG =6
12
25
ns
tr
rise time
11
25
ns
td(off)
turn-off delay time
50
80
ns
tf
fall time
25
40
ns
Source-drain (reverse) diode
VSD
0.7
1.1
V
trr
reverse recovery time
IS = 2.9 A; dIS/dt = 100 A/s; VGS =0V
105
ns
Qr
recovery charge
0.45
C
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