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參數(shù)資料
| 型號： | 934056624115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 100 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, SOT-363, 6 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 122K |
| 代理商： | 934056624115 |
2002 Jan 14
2
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
BGM1011
FEATURES
Internally matched to 50
Very high gain (up to 37 dB at 2 Ghz)
Sloped gain curve for optimal performance
with output into lossy cable
14 dBm saturated output power at 1 GHz
High linearity (23 dBm IP3(out) at 1 GHz)
40 dB isolation
APPLICATIONS
LNB IF amplifiers
Cable systems
General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN
DESCRIPTION
1VS
2, 5
GND2
3
RF out
4GND1
6RF in
MAM455
13
2
4
1
63
2, 5
4
5
6
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: C1-.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VS
DC supply voltage
5
6
V
IS
DC supply current
25.5
mA
|s21|2
insertion power gain
f = 1 GHz
30
dB
NF
noise figure
f = 1 GHz
4.7
dB
PL(sat)
saturated load power
f = 1 GHz
13.8
dBm
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VS
DC supply voltage
RF input AC coupled
6V
IS
supply current
35
mA
Ptot
total power dissipation
Ts
≤ 90 °C
200
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
PD
maximum drive power
0dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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