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參數(shù)資料
| 型號： | 934056624115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 100 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, SOT-363, 6 PIN |
| 文件頁數(shù)： | 8/11頁 |
| 文件大小： | 122K |
| 代理商： | 934056624115 |
2002 Jan 14
6
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
BGM1011
-50
-40
-30
-20
-10
0
1000
2000
3000
f (MHz)
|s12|
2
(dB)
Fig.5
Isolation (|s12|2) as a function of frequency;
typical values.
IS =25.5 mA; VS = 5.0 V; PD =
35 dBm; ZO =50 .
20
25
30
35
40
0
1000
2000
3000
f (MHz)
|s21|
2
(dB)
(1)
(2)
(3)
Fig.6
Insertion gain (|s21|2) as a function of
frequency; typical values.
PD =
35 dBm; ZO =50 .
(1) IS = 19.5 mA; VS=4.5 V
(2) IS = 25.5 mA; VS=5.0 V
(3) IS = 29.8 mA; VS=5.5 V
0
5
10
15
20
-30
-25
-20
-15
-10
-5
0
P
D (dBm)
P
L
(dBm)
(1)
(3)
(2)
Fig.7
Load power as a function of drive power at
1 GHz; typical values.
f = 1 GHz; ZO =50
.
(1) VS=4.5 V
(2) VS=5.0 V
(3) VS=5.5 V
-5
0
5
10
15
-40
-35
-30
-25
-20
-15
-10
-5
0
P
D (dBm)
P
L
(dBm)
(1)
(2)
(3)
Fig.8
Load power as a function of drive power at
2.2 GHz; typical values.
f=2.2 GHz; ZO =50
.
(1) VS=4.5 V
(2) VS=5.0 V
(3) VS=5.5 V
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