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參數(shù)資料
| 型號： | 934056624115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 100 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, SOT-363, 6 PIN |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 122K |
| 代理商： | 934056624115 |
2002 Jan 14
3
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
BGM1011
THERMAL RESISTANCE
CHARACTERISTICS
VS =5V; IS =25.5mA; Tj =25
°C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to solder point Ptot = 200 mW; Ts
≤ 90 °C
300
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IS
supply current
20
25.5
32
mA
|s21|2
insertion power gain
f = 100 MHz
25
dB
f=1GHz
30
dB
f=1.8GHz
35
dB
f=2.2GHz
37
dB
f=2.6GHz
32
dB
f=3GHz
28
dB
RL IN
return losses input
f = 1 GHz
11
dB
f=2.2GHz
8
dB
RL OUT
return losses output
f = 1 GHz
18
dB
f=2.2GHz
12
dB
NF
noise figure
f = 1 GHz
4.7
dB
f=2.2GHz
4.6
dB
BW
bandwidth
at
|s21|2 3 dB below flat gain at 1 GHz
2.9
GHz
K
stability factor
f = 1 GHz
1.8
f=2.2GHz
0.9
PL(sat)
saturated load power
f = 1 GHz
13.8
dBm
f=2.2GHz
10.8
dBm
PL 1 dB
load power
at 1 dB gain compression; f = 1 GHz
12.2
dBm
at 1 dB gain compression; f = 2.2 GHz
7.7
dBm
IP3(in)
input intercept point
f = 1 GHz
7
dBm
f=2.2GHz
20
dBm
IP3(out)
output intercept point
f = 1 GHz
23
dBm
f=2.2GHz
16
dBm
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