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參數(shù)資料
| 型號： | 934056631215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 10/13頁 |
| 文件大小： | 149K |
| 代理商： | 934056631215 |
2001 Jan 18
6
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
handbook, halfpage
010
20
40
gain
(dB)
GUM
MSG
20
0
16
MGS500
30
12
8
4
IC (mA)
Gmax
Fig.6
Gain as a function of collector current;
typical values.
f= 1GHz; VCE =6 V.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
handbook, halfpage
50
0
MGS501
102
103
104
10
20
30
40
gain
(dB)
f (MHz)
GUM
MSG
Gmax
Fig.7
Gain as a function of frequency; typical
values.
IC =5 mA; VCE =6 V.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
handbook, halfpage
50
0
MGR502
102
103
104
10
20
30
40
gain
(dB)
f (MHz)
GUM
MSG
Gmax
Fig.8
Gain as a function of frequency; typical
values.
IC =15 mA; VCE =6 V.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
handbook, halfpage
50
0
MGS503
102
103
104
10
20
30
40
gain
(dB)
f (MHz)
GUM
MSG
Gmax
Fig.9
Gain as a function of frequency; typical
values.
IC =30 mA; VCE =6 V.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
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