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參數(shù)資料
| 型號： | 934056631215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 149K |
| 代理商： | 934056631215 |
2001 Jan 18
4
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
CHARACTERISTICS
Tj =25
°C unless otherwise specified.
Note
1.
GUM is the maximum unilateral power gain, assuming s12 is zero.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics
V(BR)CBO
collector-base breakdown voltage
IC =100
A; IE =0
20
V
V(BR)CEO
collector-emitter breakdown
voltage
IC =100
A; IB =0
10
V
V(BR)EBO
emitter-base breakdown voltage
IE =10
A; IC =0
1.5
V
VBEF
forward base-emitter voltage
IE =25mA
1.05
V
ICBO
collector-base leakage current
VCB =10V; IE =0
100
nA
IEBO
emitter-base leakage current
VEB =1V; IC =0
100
nA
hFE
DC current gain
IC =5 mA; VCE = 6 V
100
150
200
IC =15mA; VCE =6V
150
AC characteristics
Cre
feedback capacitance
IC =0; VCB =6V; f = 1MHz
0.3
pF
fT
transition frequency
IC =15mA; VCE =6V; fm =1 GHz
7
9
GHz
|s21|2
insertion gain
IC =15mA; VCE = 6 V; f = 1 GHz
13
15
dB
GUM
maximum unilateral power gain;
note 1
IC =15mA; VCE =6V;
Tamb =25
°C; f = 1 GHz
16
dB
IC =15mA; VCE =6V;
Tamb =25
°C; f = 2 GHz
10
dB
NF
noise figure
ΓS = Γopt; IC =5mA; VCE =6V;
f= 1 GHz
1.5
2.5
dB
ΓS = Γopt; IC =5mA; VCE =6V;
f= 2 GHz
2.1
dB
G
UM
10
s
21
2
1s
11
2
–
() 1s
22
2
–
()
-------------------------------------------------------- dB
log
=
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