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參數(shù)資料
| 型號： | 934056631215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大小： | 149K |
| 代理商： | 934056631215 |
2001 Jan 18
2
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
FEATURES
Small size
Low noise
Low distortion
High gain
Gold metallization ensures excellent reliability.
APPLICATIONS
Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
PINNING SOT23
PIN
DESCRIPTION
1base
2
emitter
3
collector
handbook, halfpage
MSB003
Top view
12
3
Fig.1 Simplified outline (SOT23).
Marking code: LBp
QUICK REFERENCE DATA
Note
1.
Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Cre
feedback capacitance
IC =0; VCB =6V; f=1MHz
0.3
pF
fT
transition frequency
IC =15mA; VCE =6 V; fm =1GHz
7
9
GHz
GUM
maximum unilateral power gain
IC =15mA; VCE =6 V;
Tamb =25
°C; f = 1 GHz
16
dB
NF
noise figure
ΓS = Γopt; IC =5mA; VCE =6 V;
f=1GHz
1.5
2.5
dB
Ptot
total power dissipation
Ts =60
°C; note 1
360
mW
Rth j-s
thermal resistance from junction
to soldering point
320
K/W
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