參數(shù)資料
型號(hào)： 934056636127
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： 45 A BUF OR INV BASED PRPHL DRVR, PSFM5
封裝： PLASTIC, TO-220, SOT-263B-01, 5 PIN
文件頁(yè)數(shù)： 10/13頁(yè)
文件大?。?/td> 190K
代理商： 934056636127
Philips Semiconductors
Product data
PowerMOS transistor
PIP3201-A
TOPFET high side switch
OVERLOAD PROTECTION CHARACTERISTICS
5.5 V
≤ V
BG ≤ 35 V, limits are at -40C ≤ Tmb ≤ 150C and typicals at Tmb = 25 C unless otherwise stated.
Refer to TRUTH TABLE.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Overload protection
V
BL = VBG
I
L(lim)
Load current limiting
V
BG ≥ 9 V
34
45
64
A
Short circuit load protection
V
BL(TO)
Battery load threshold voltage
1
V
BG = 16 V
8
10
12
V
BG = 35 V
15
20
25
V
t
d sc
Response time
2
V
BL > VBL(TO)
-
180
250
s
Overtemperature protection
T
j(TO)
Threshold junction
150
170
190
C
temperature
3
T
j(TO)
Hysteresis
-
10
-
C
SWITCHING CHARACTERISTICS
T
mb = 25 C, VBG = 13 V, for resistive load RL = 13 .
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
During turn-on
from input going high
t
d on
Delay time
to 10% V
L
-40
60
s
dV/dt
on
Rate of rise of load voltage
30% to 70% V
L
-
0.35
1
V/
s
t
on
Total switching time
to 90% V
L
-
140
200
s
During turn-off
from input going low
t
d off
Delay time
to 90% V
L
-55
80
s
dV/dt
off
Rate of fall of load voltage
70% to 30% V
L
-
0.6
1
V/
s
t
off
Total switching time
to 10% V
L
-
85
120
s
CAPACITANCES
T
mb = 25 C; f = 1 MHz; VIG = 0 V.
designed in parameters.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
C
ig
Input capacitance
V
BG = 13 V
-
15
20
pF
C
bl
Output capacitance
V
BL = 13 V
-
250
350
pF
C
sg
Status capacitance
V
SG = 5 V
-
11
15
pF
1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. After short circuit protection has
operated, the input voltage must be toggled low for the switch to resume normal operation.
2 Measured from when the input goes high.
3 After cooling below the reset temperature the switch will resume normal operation.
May 2001
6
Rev 1.010
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