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參數(shù)資料
| 型號： | 934056636127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 45 A BUF OR INV BASED PRPHL DRVR, PSFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263B-01, 5 PIN |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 190K |
| 代理商： | 934056636127 |
Philips Semiconductors
Product data
PowerMOS transistor
PIP3201-A
TOPFET high side switch
Fig.28. Short circuit load threshold voltage.
V
BL(TO) = f(VBG); conditions -40C ≤ Tmb ≤ 150C
Fig.29. Typical output capacitance. T
mb = 25 C
C
bl = f(VBL); conditions f = 1 MHz, VIG = 0 V
Fig.30. Typical reverse battery characteristic.
I
G = f(VBG); conditions IL = 0 A, Tj = 25 C
Fig.31. Typical overload current, V
BL = 8V.
I
L = f(Tj); parameter VBG = 13V;tp = 300 s
Fig.32. Typical short circuit load threshold voltage.
V
BL(TO) = f(Tj); condition VBG = 16 V
Fig.33. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
0
5
10
15
20
25
30
35
0
1020
304050
VBG/ V
VBL(TO) / V
min.
max.
typ. 25C
30
35
40
45
50
-50
0
50
100
150
200
Tj /
OC
IL(lim) / A
0
1020304050
10 nF
1nF
100pF
CBL
VBL / V
VBL(TO) / V
10.0
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
-50
0
50
100
150
200
Tj /
OC
IG / mA
-200
-150
-100
-50
0
-20
-15
-10
-5
0
VBG / V
D =
tp
T
P
t
D
Zth j-mb ( K / W )
t / s
1e+02
1e-01
1e-03
1e-05
1e-07
1e+01
1e-03
1e-02
1e-01
1e+00
D =
0.5
0.2
0.1
0.05
0.02
0
May 2001
11
Rev 1.010
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