參數(shù)資料
型號(hào)： 934056636127
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： 45 A BUF OR INV BASED PRPHL DRVR, PSFM5
封裝： PLASTIC, TO-220, SOT-263B-01, 5 PIN
文件頁數(shù)： 2/13頁
文件大小： 190K
代理商： 934056636127
Philips Semiconductors
Product data
PowerMOS transistor
PIP3201-A
TOPFET high side switch
Fig.22. Typical battery to ground clamping voltage.
V
BG = f(Tj); parameter IG
Fig.23. Typical battery to load clamping voltage.
V
BL = f(Tj); parameter IL; condition IG = 10mA
Fig.24. Typical negative load clamping.
I
L = f(VLG); conditions VIG = = 0V, Tj = 25C
Fig.25. Typical negative load clamping voltage.
V
LG = f(Tj); parameter IL; condition VIG = = 0V
Fig.26. Typical reverse diode characteristic.
I
L = f(VBL); conditions VIG = 0 V, Tj = 25 C
Fig.27. Typical overload characteristic, T
mb = 25 C.
I
L = f(VBL); condition VBG = 16 V; parameter tp
50
55
60
65
-50
0
50
100
150
200
Tj /
OC
VBG / V
IG =
1 mA
200 mA
-30
-25
-20
-15
-10
-50
0
50
100
150
200
Tj /
OC
IL =
10 mA
10 A
VLG / V
50
55
60
65
-50
0
50
100
150
200
Tj /
OC
IL =
1 mA
600 mA
VBL / V
IL / A
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-1.1
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
VBL / V
IL / A
0
5
10
-30
-25
-20
-15
-10
VLG / V
IL / A
0
5
10
15
20
25
30
35
40
45
50
02468
10
12
14
16
18
20
VBL / V
Short circuit trip = 150us
VBL(TO) typ.
current limiting
May 2001
10
Rev 1.010
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