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參數(shù)資料
| 型號： | 934056816112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 870 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 934056816112 |
2001 Nov 27
2
Philips Semiconductors
Product specication
860 MHz, 27.8 dB gain push-pull amplier
CGY887B
FEATURES
Excellent linearity
High gain
Extremely low noise
Excellent return loss properties
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
Hybrid dynamic range amplifier module in a SOT115J
package operating at a voltage supply of 24 V (DC),
employing both GaAs and Si dies.
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2, 3
common
5+VB
7, 8
common
9
output
handbook, halfpage
7
8
9
2
35
1
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Gp
power gain
f = 45 MHz
27.2
27.8
dB
f = 870 MHz
28
29
dB
Itot
total current consumption (DC)
VB = 24 V
295
325
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VB
supply voltage
30
V
Vi
RF input voltage (single tone)
70
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
20
+100
°C
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