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參數(shù)資料
| 型號： | 934056816112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 870 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 934056816112 |
2001 Nov 27
3
Philips Semiconductors
Product specication
860 MHz, 27.8 dB gain push-pull amplier
CGY887B
CHARACTERISTICS
Bandwidth 45 to 870 MHz; VB = 24 V; Tmb =35 °C; ZS =ZL =75 .
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 45 MHz
27.2
27.5
27.8
dB
f = 870 MHz
28
28.5
29
dB
SL
slope straight line
f = 45 to 870 MHz
0.5
1
1.5
dB
FL
atness straight line
f = 45 to 100 MHz
0.25 +0.25 dB
f = 100 to 800 MHz
0.5
+0.5
dB
f = 800 to 870 MHz
0.4
+0.1
dB
s11
input return losses
f = 40 to 80 MHz
24
dB
f = 80 to 160 MHz
22
dB
f = 160 to 320 MHz
19
dB
f = 320 to 550 MHz
18
dB
f = 550 to 650 MHz
17
dB
f = 650 to 750 MHz
16
dB
f = 750 to 870 MHz
14
dB
f = 870 to 914 MHz
12
dB
s22
output return losses
f = 40 to 80 MHz
23
dB
f = 80 to 160 MHz
22
dB
f = 160 to 320 MHz
18
dB
f = 320 to 550 MHz
17
dB
f = 550 to 650 MHz
17
dB
f = 650 to 750 MHz
17
dB
f = 750 to 870 MHz
14
dB
f = 870 to 914 MHz
12
dB
s21
phase response
f = 50 MHz
45
+45
deg
CTB
composite triple beat
79 chs at; Vo = 44 dBmV; fm = 331.25 MHz
63.5 dB
132 chs at; Vo = 44 dBmV; fm = 445.25 MHz 57.5
dB
Xmod
cross modulation
79 chs at; Vo = 44 dBmV; fm = 55.25 MHz
57
dB
132 chs at; Vo = 44 dBmV; fm = 55.25 MHz
51
dB
CSO
composite second
order distortion
79 chs at; Vo = 44 dBmV; fm = 54.0 MHz
64
dB
132 chs at; Vo = 44 dBmV; fm = 860.5 MHz
58
dB
NF
noise gure
f = 50 MHz
5dB
f = 550 MHz
5dB
f = 750 MHz
5dB
f = 870 MHz
5dB
d2
second order distortion
note 1
60
dB
note 2
57
dB
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