參數(shù)資料
型號: 934056816112
廠商: NXP SEMICONDUCTORS
元件分類: 放大器
英文描述: 40 MHz - 870 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝: SOT-115J, 7 PIN
文件頁數(shù): 4/8頁
文件大小: 45K
代理商: 934056816112
2001 Nov 27
4
Philips Semiconductors
Product specication
860 MHz, 27.8 dB gain push-pull amplier
CGY887B
Notes
1. fp = 55.25 MHz; Vp = 60 dBmV; fq = 493.25 MHz; Vq = 60 dBmV; measured at fp +fq = 548.5 MHz.
2. fp = 55.25 MHz; Vp = 60 dBmV; fq = 805.25 MHz; Vq = 60 dBmV; measured at fp +fq = 860.5 MHz.
3. Measured according to DIN45004B: fp = 540.25 MHz; Vp =Vo; fq = 547.25 MHz; Vq =Vo 6 dB; fr = 549.25 MHz;
Vr =Vo 6 dB; measured at fp +fq fr = 538.25 MHz.
4. Measured according to DIN45004B: fp = 851.25 MHz; Vp =Vo; fq = 858.25 MHz; Vq =Vo 6 dB; fr = 860.25 MHz;
Vr =Vo 6 dB; measured at fp +fq fr = 849.25 MHz.
5. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
Vo
output voltage
dim = 60 dB; note 3
66
dBmV
dim = 60 dB; note 4
64
dBmV
Itot
total current
consumption (DC)
note 5
295
310
325
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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