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參數(shù)資料
| 型號(hào)： | 934056832127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, LOW PROFILE TO-220AB, I2PAK-3 |
| 文件頁數(shù)： | 13/16頁 |
| 文件大小： | 320K |
| 代理商： | 934056832127 |
Philips Semiconductors
BUK9506-55A; BUK9606-55A;
BUK9E06-55A
Product data
Rev. 03 — 23 July 2001
6 of 16
9397 750 08416
Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 30 A; VGS =0V;
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
80
ns
Qr
recovered charge
200
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 sTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ne99
0
50
100
150
200
250
300
350
400
02468
10
VDS (V)
ID
(A)
2.4
3
4
5
6
7
10
VGS (V) =
03ne98
4
5
6
7
8
24
68
10
VGS (V)
RDSon
(m
)
03nf00
4
5
6
7
8
0
2040
6080
100
ID (A)
RDSon
(m
)
VGS (V) = 3
3.2
3.4
3.6
4
5
03ne89
0
0.6
1.2
1.8
2.4
-60
0
60
120
180
Tj (
oC)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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