參數(shù)資料
型號(hào)： 934056832127
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, LOW PROFILE TO-220AB, I2PAK-3
文件頁(yè)數(shù)： 9/16頁(yè)
文件大小： 320K
代理商： 934056832127
Philips Semiconductors
BUK9506-55A; BUK9606-55A;
BUK9E06-55A
Product data
Rev. 03 — 23 July 2001
2 of 16
9397 750 08416
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
[1]
Current is limited by power dissipation chip rating
[2]
Continuous current is limited by package
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
55
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
154
A
Ptot
total power dissipation
Tmb =25 °C
300
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS =5V; ID = 25 A
5.3
6.3
m
Tj =25 °C; VGS = 4.5 V; ID = 25 A
5.5
6.7
m
Tj =25 °C; VGS = 10 V; ID = 25 A
4.8
5.8
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
55
V
VDGR
drain-gate voltage (DC)
RGS =20k
55
V
VGS
gate-source voltage (DC)
±15
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V;
154
A
75
A
Tmb = 100 °C; VGS =5V; Figure 2
75
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
616
A
Ptot
total power dissipation
Tmb =25 °C; Figure 1
300
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
154
A
75
A
IDRM
pulsed reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
616
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID =75A;
VDS ≤ 55 V; VGS =5V; RGS =50 ;
starting Tmb =25 °C
1.1
J
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