參數(shù)資料
型號: 934056834112
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-2
文件頁數(shù): 3/8頁
文件大?。?/td> 64K
代理商: 934056834112
2002 Oct 02
3
Philips Semiconductors
Product specication
Avionics LDMOS transistor
BLA1011-2
THERMAL CHARACTERISTICS
Notes
1. Thermal impedance is determined under RF operating conditions with pulsed bias and Th =25 °C.
2. Typical value for mounting on PCB with 32 0.4 mm thermal vias with 20
m tin plating and thermal compound
between PCB and heatsink.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C; Rth mb-h = 6.5 K/W unless otherwise specied.
Ruggedness in class-AB operation
The BLA1011-2 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the
operating conditions.
Typical impedance values
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Zth j-mb
thermal impedance from junction to mounting base
note 1
1
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
note 2
6.5
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 0.2 mA
75
V
VGSth
gate-source threshold voltage
VDS =10V; ID =20mA
2
5V
IDSS
drain-source leakage current
VGS = 0; VDS =26V
0.1
mA
IDSX
on-state drain current
VGS =VGSth +9V; VDS = 10 V
2.8
A
IGSS
gate leakage current
VGS = ±15 V; VDS =0
40
nA
gfs
forward transconductance
VDS =10V; ID = 0.75 A
0.5
S
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 0.75 A
1.2
Cis
input capacitance
VGS =0V; VDS = 26 V; f = 1 MHz
11
pF
Cos
output capacitance
VGS =0V; VDS = 26 V; f = 1 MHz
9
pF
Crs
feedback capacitance
VGS =0V; VDS = 26 V; f = 1 MHz
0.5
pF
MODE OF
OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
tr
(ns)
tf
(ns)
PULSE DROOP
(dB)
Pulsed class-AB;
tp =50 s; δ =2%
1030 to 1090
36
50
2
>16
<15
<0.5
FREQUENCY
(MHz)
ZS
(
)
ZL
(
)
1030
1.51 + j 11.76
6.9 + j 5
1060
1.51 + j 11.26
6.7+j5.9
1090
1.52 + j 10.77
5.1+j6.6
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