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參數(shù)資料
| 型號： | 934056834112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 64K |
| 代理商： | 934056834112 |
2002 Oct 02
4
Philips Semiconductors
Product specication
Avionics LDMOS transistor
BLA1011-2
handbook, halfpage
0
3
2
1
0
10
50
20
30
PL
(W)
40
PD (mW)
MGU484
(1)
(2)
(3)
Fig.2
Load power as a function of drive power;
typical values.
Th =25 °C; VDS = 36 V; IDQ = 50 mA; class-AB;
tp =50 s; δ = 2%.
(1) f = 1060 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.
handbook, halfpage
01
Gp
(dB)
2
PL (W)
3
20
0
16
12
8
4
MGU483
(1)
(2)
(3)
Fig.3
Power gain as a function of load power;
typical values.
Th =25 °C; VDS = 36 V; IDQ = 50 mA; class-AB;
tp =50 s; δ = 2%.
(1) f = 1060 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.
handbook, halfpage
1000
1040
Gp
(dB)
1080
f (MHz)
1120
20
0
16
12
8
4
MGU485
(1)
(2)
(3)
(4)
Fig.4
Power gain as a function of frequency;
typical values.
Th =25 °C; VDS = 36 V; IDQ = 50 mA; class-AB;
tp =50 s; δ = 2%.
(1) PL =1W.
(2) PL =2W.
(3) PL =3W.
(4) PL =4W.
handbook, halfpage
05
VGS (V)
2.5
0
0.5
1
1.5
2
12
3
PL
(W)
4
MGU486
Fig.5
Load power as a function of gate-source
voltage; typical values.
Th =25 °C; VDS = 36 V; IDQ = 50 mA; class-AB;
f = 1090 MHz; tp =50 s; δ = 2%.
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