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參數(shù)資料
| 型號： | 934056836112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 934056836112 |
2002 Oct 02
2
Philips Semiconductors
Product specication
Avionics LDMOS transistor
BLA1011-10
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators,
reducing common mode inductance.
APPLICATIONS
Avionics transmitter applications in the
1030 to 1090 MHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the flange.
PINNING - SOT467C
PIN
DESCRIPTION
1
drain
2
gate
3
source, connected to ange
1
3
2
Top view
MBK584
Fig.1 Simplified outline (SOT467C).
QUICK REFERENCE DATA
RF performance at Th =25 °C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
η
D
(%)
Pulsed class-AB;
tp =50 s; δ =2%
1030 to 1090
36
10
>15
>40
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
75
V
VGS
gate-source voltage
±15
V
ID
drain current (DC)
2.2
A
Ptot
total power dissipation
Th ≤ 25 °C
25
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
200
°C
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