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參數(shù)資料
| 型號： | 934056836112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 934056836112 |
2002 Oct 02
3
Philips Semiconductors
Product specication
Avionics LDMOS transistor
BLA1011-10
THERMAL CHARACTERISTICS
Notes
1. Thermal impedance is determined under RF operating conditions with pulsed bias.
2. Typical value for SOT467C mounted with thermal compound and 0.6 Nm fastening torque.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C; Rth mb-h = 0.55 K/W unless otherwise specied.
Ruggedness in class-AB operation
The BLA1011-10 is capable of withstanding a load mismatch corresponding to VSWR =5:1 through all phases under
the operating conditions.
Typical impedance values
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Zth j-mb
thermal impedance from junction to mounting base
Tmb =25 °C; note 1
1.2
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
note 2
0.55
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 0.7 mA
75
V
VGSth
gate-source threshold voltage
VDS =10V; ID =20mA
4
5V
IDSS
drain-source leakage current
VGS = 0; VDS =28V
0.1
mA
IDSX
on-state drain current
VGS =VGSth +9V; VDS = 10 V 2.8
A
IGSS
gate leakage current
VGS = ±15 V; VDS =0
40
nA
gfs
forward transconductance
VDS =10V; ID = 0.75 A
0.5
S
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 0.75 A
1.2
MODE OF
OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
tr
(ns)
tf
(ns)
PULSE DROOP
(dB)
Pulsed class-AB;
tp =50 s; δ =2%
1030 to 1090
36
50
10
>15
>40
<20
<0.5
FREQUENCY
(MHz)
ZS
(
)
ZL
(
)
1030
1 + j 10.6
4.3 + j 7
1060
1.3 + j 6.99
5.99 + j 13.98
1090
1.42+j7
7+j 11.58
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