參數(shù)資料
型號: 934056836112
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, LDMOST, 2 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 63K
代理商: 934056836112
2002 Oct 02
4
Philips Semiconductors
Product specication
Avionics LDMOS transistor
BLA1011-10
handbook, halfpage
0
50
150
15
5
10
100
PL
(W)
PD (mW)
MGU494
(3)
(1)
(2)
Fig.2
Load power as a function of drive power;
typical values.
Th =25 °C; VDS = 36 V; IDQ = 50 mA; class-AB;
tp =50 s; δ = 2%.
(1) f = 1090 MHz.
(2) f = 1060 MHz.
(3) f = 1030 MHz.
handbook, halfpage
05
Gp
(dB)
η
D
(%)
15
24
0
8
16
20
4
12
60
0
20
40
50
10
30
10
PL (W)
MGU493
η
D
Gp
(3)
(2)
(1)
Fig.3
Power gain and efficiency as functions of
load power; typical values.
Th =25 °C; VDS = 36 V; IDQ = 50 mA; class-AB;
tp =50 s; δ = 2%.
(1) f = 1090 MHz.
(2) f = 1060 MHz.
(3) f = 1030 MHz.
handbook, halfpage
1000
1040
1080
Gp
(dB)
f (MHz)
1120
24
0
8
16
20
4
12
MGU495
Fig.4
Power gain as a function of frequency;
typical values.
Th =25 °C; VDS = 36 V; IDQ = 50 mA; class-AB;
PL = 10 W; tp =50 s; δ = 2%.
handbook, halfpage
0
12
8
4
0
15
23
PL
(W)
4
VGS (V)
MGU496
Fig.5
Load power as a function of gate-source
voltage; typical values.
Th =25 °C; VDS = 36 V; IDQ = 50 mA; class-AB;
f = 1090 MHz; tp =50 s; δ = 2%.
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