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參數(shù)資料
| 型號： | 934056905125 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, TSOP6, SMT6, SSOT6, SMD, SC-74, 6 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 934056905125 |
2001 Nov 15
2
Philips Semiconductors
Product specication
40 V low VCEsat PNP transistor
PBSS5140D
FEATURES
Low collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat
generation.
APPLICATIONS
General purpose switching and muting
LCD back-lighting
Supply line switching circuits
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
PNP low VCEsat transistor in an SC-74 (SOT457) plastic
package.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE
PBSS5140D
51
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
40
V
IC
collector current (DC)
1A
ICM
peak collector current
2A
RCEsat
equivalent on-resistance
<500
m
PIN
DESCRIPTION
1
collector
2
collector
3
base
4
n.c.
5
collector
6
emitter
handbook, halfpage
MAM458
Top view
1, 2, 5
6
3
13
2
4
5
6
Fig.1
Simplified outline (SC-74; SOT457) and
symbol.
LIMITING VALUES
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and mounting pad for collector 1 cm2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
1A
ICM
peak collector current
2A
IBM
peak base current
1A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
460
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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