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參數(shù)資料
| 型號： | 934056905125 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, TSOP6, SMT6, SSOT6, SMD, SC-74, 6 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 61K |
| 代理商： | 934056905125 |
2001 Nov 15
4
Philips Semiconductors
Product specication
40 V low VCEsat PNP transistor
PBSS5140D
handbook, halfpage
0
1200
200
400
600
800
1000
MHC088
101
hFE
10
1
IC (mA)
102
103
104
(1)
(2)
(3)
Fig.2
DC current gain as a function of collector
current; typical values.
VCE = 5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
10
1
101
MHC089
101
1
10
VBE
(V)
IC (mA)
103
102
104
(1)
(2)
(3)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
VCE = 5V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
103
102
10
1
MHC090
1
10
VCEsat
(mV)
IC (mA)
102
103
104
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
10
1
101
102
MHC091
101
1
10
RCEsat
(
)
IC (mA)
103
102
104
(1)
(2)
(3)
Fig.5
Equivalent on-resistance as a function of
collector current; typical values.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
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