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參數(shù)資料
| 型號： | 934056905125 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, TSOP6, SMT6, SSOT6, SMD, SC-74, 6 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 61K |
| 代理商： | 934056905125 |
2001 Nov 15
3
Philips Semiconductors
Product specication
40 V low VCEsat PNP transistor
PBSS5140D
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air; note 1
272
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 40 V; IC =0
100
nA
VCB = 40 V; IC = 0; Tj = 150 °C
50
A
ICEO
collector-emitter cut-off current
VCE = 30 V; IB =0
100
nA
IEBO
emitter-base cut-off current
VEB = 5 V; IC =0
100
nA
hFE
DC current gain
VCE = 5V
IC = 1 mA
300
IC = 100 mA
300
800
IC = 500 mA
250
IC = 1 A
160
VCEsat
collector-emitter saturation
voltage
IC = 100 mA; IB = 1mA
200
mV
IC = 500 mA; IB = 50 mA
250
mV
IC = 1 A; IB = 100 mA
500
mV
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
300
<500
m
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 50 mA
1.1
V
VBEon
base-emitter turn on voltage
VCE = 5 V; IC = 1A
1V
fT
transition frequency
IC = 50 mA; VCE = 10 V;
f = 100 MHz
150
MHz
Cc
collector capacitance
VCB = 10 V; IE =Ie = 0; f = 1 MHz
12
pF
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