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參數(shù)資料
| 型號(hào)： | 934056924112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | 934056924112 |
2002 Sep 27
2
Philips Semiconductors
Product specication
L-band radar LDMOS driver transistor
BLL1214-35
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators,
reducing common mode inductance.
APPLICATIONS
L-band radar applications in the 1200 to 1400 MHz
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the flange.
PINNING - SOT467C
PIN
DESCRIPTION
1
drain
2
gate
3
source, connected to ange
1
3
2
Top view
MBK584
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th =25 °C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
η
D
(%)
Pulsed class-AB;
t=1ms;
δ =10%
1200 to 1400
36
35
>13
>43
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
75
V
VGS
gate-source voltage
±15
V
Ptot
total power dissipation
under RF conditions; Th ≤ 25 °C
110
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
200
°C
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