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參數資料
| 型號： | 934056924112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數： | 4/8頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 934056924112 |
2002 Sep 27
4
Philips Semiconductors
Product specication
L-band radar LDMOS driver transistor
BLL1214-35
handbook, halfpage
0
(1)
(2)
(3)
1
50
0
10
20
30
40
0.2
0.4
0.6
0.8
Pi (W)
PL
(W)
MLD923
Fig.2
Load power as a function of input power;
typical values.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
tp = 1 ms; δ = 10%.
handbook, halfpage
0
(1)
(2)
(3)
50
20
15
16
17
18
19
10
20
30
40
PL (W)
Gp
(dB)
MLD924
Fig.3
Power gain as a function of load power;
typical values.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
tp = 1 ms; δ = 10%.
handbook, halfpage
0
(3)
(1)
(2)
10
50
20
30
40
MLD925
PL (W)
η
(%)
60
0
20
40
Fig.4
Efficiency as a function of load power;
typical values.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
tp = 1 ms; δ = 10%.
handbook, halfpage
1.1
1.2
f (GHz)
Gp
(dB)
Gp
η
D
(%)
η
D
1.3
1.5
20
15
19
1.4
18
17
16
60
10
50
40
30
20
MLD926
Fig.5
Power gain and efficiency as functions of
frequency; typical values.
tp = 1 ms; δ = 10%.
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