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參數(shù)資料
| 型號(hào)： | 934056924112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 934056924112 |
2002 Sep 27
3
Philips Semiconductors
Product specication
L-band radar LDMOS driver transistor
BLL1214-35
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under RF operating conditions; tp = 1 ms, δ =10%.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C; Zth mb-h = 0.65 K/W, unless otherwise specied.
Ruggedness in class-AB operation
The BLL1214-35 is capable of withstanding a load mismatch corresponding to VSWR =5:1 through all phases under
the following conditions: VDS = 36 V; frequency from 1200 MHz to 1400 MHz at rated load power.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Zth j-h
thermal impedance from junction to heatsink
Th =25 °C; note 1
1.1
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 0.7 mA
75
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID =70mA
4.5
5.5
V
IDSS
drain-source leakage current
VGS = 0; VDS =36V
10
A
IDSX
on-state drain current
VGS =VGSth +9V; VDS =10V
10
A
IGSS
gate leakage current
VGS = ±20 V; VDS =0
125
nA
gfs
forward transconductance
VDS = 10 V; ID = 2.5 A
2
S
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 2.5 A
300
m
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
Pulsed class-AB;
t=1ms;
δ =10%
1200 to 1400
36
50
35
>13
>43
Typical impedance
FREQUENCY
(GHZ)
ZS
(
)
ZL
(
)
1.20
6.48
j 3.9
1.95 + j 3.27
1.25
3.88
j 3.2
1.90 + j 2.57
1.30
3.28
j 2.4
2.01 + j 2.27
1.35
2.55
j 1.48
2.20 + j 2.26
1.40
1.69
j 0.51
1.72 + j 2.35
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