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參數(shù)資料
| 型號(hào)： | 934056954118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 34 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 10/13頁(yè) |
| 文件大小： | 274K |
| 代理商： | 934056954118 |
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Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 06 November 2001
6 of 13
9397 750 09024
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
-
1
1.2
V
trr
reverse recovery time
IS = 20 A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
-36
-
ns
Qr
recovered charge
-
70
-
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °CTj =25 °C and 175 °C; VDS >ID xRDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ah49
0
10
20
30
40
0
0.5
1
1.5
2
VDS (V)
ID
(A)
4 V
5 V
Tj = 25 C
VGS = 2.5 V
10 V
3.5 V
3 V
03ah51
0
10
20
30
40
01234
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25 C
175 C
03ah50
0.02
0.03
0.04
0.05
0
10
203040
ID (A)
RDSon
(
)
4V
Tj = 25 C
5 V
10 V
VGS = 3.5 V
03af18
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
Tj (C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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